Widening Application Base of GaN-based Devices to Boost Global GaN Semiconductor Devices Market

Published Date : Feb 12, 2018

ALBANY, New York, Feb 12, 2018: MarketResearchReports.biz has recently announced the addition of a new research report on the global market for gallium nitride (GaN) semiconductor devices. The research study, titled “GaN Semiconductor Devices Market (Product - Power Semiconductors, GaN RF Devices and Opto-semiconductors; Wafer Size - 2 inch, 4 inch, 6 inch and 8 inch; Application - Information and Communication Technology, Automotive, Consumer Electronics, Defence, Aerospace) - Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2016 - 2024,” evaluates the past and the current performance of this market, highlighting the progress in each of the regional markets for GaN semiconductor devices across the world.

According to the research report, the advancement in the technology, together with the widening of the application areas for GaN-based devices is driving the growth of the global GaN semiconductor devices market substantially. However, the high cost incurred in the production of pure gallium nitride GaN), in comparison to silicon carbide, which is a prominent semiconductor material for high voltage power electronics, may hamper the market’s growth over the next few years, states the research study.

In this research report, the global market for GaN semiconductor devices has been evaluated on the basis of the type of the product, size of the wafer, application, and the regional presence of this market. Based on the product, the market has been classified into power semiconductors, GaN radio frequency devices, and opto-semiconductors. In terms of the type of the wafer size, the market has been divided into 2 inch, 4 inch, 6 inch, and 8 inch. By the application, the research report has segmented this market into the Information and communication technology, automotive, consumer electronics, and defense and aerospace industries.

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Based on the geography, the worldwide market for GaN semiconductor devices has been categorized into Asia Pacific (APAC), Europe, North America, and the Rest of the World. With the presence of a large pool of leading players, North America has surfaced as the leading regional market for GaN semiconductor devices. Researchers project this scenario to remain so over the next few years, reports the report.

In conclusion, the report provides a competitive reports of the business landscape of the global market for GaN semiconductor devices by reviewing the profiles of the key players operating in this market. With only a few multinational as well as regional suppliers of heterogeneous products and services, the market demonstrates a highly competitive landscape. GaN semiconductor device providers across the world are competing on the basis of advancements in technology and are concentrating on upgrading their current offerings in terms of quality and consistency. At the forefront of this market are Mersen S.A., Fujitsu Ltd., Avogy, Inc., GaN Systems Inc., NXP Semiconductors N.V., Cree Inc., Renesas Electronics Corp., Everlight Electronics Co., Toshiba Corp., and Efficient Power Conversion Corp.

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